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AH8503 document number: ds37684 rev. 1 - 2 1 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 high accuracy micropower linear hall effect sensor description the AH8503 is a high accuracy, micropower linear hall effect sensor with an 8-bit output resolution. the output voltage is ratiometric to the supply voltage and proportional to the magnetic flu x density perpendicular to the part marking surface. the outp ut null voltage is at half the supply voltage. AH8503 is a trimmed device with typical sensitivity of 2.25mv/g and 3.8mv/g at 1.8v and 3v respectively with an accurac y of 3% at +25c. the device has a typical input referred rms noise of 0.36g and 0.24g at 1.8v and 3.0v. designed for battery powered consumer equipment to office equipment, home appliances and industrial applicati ons, the AH8503 can operate over the supply range of 1.6v to 3.6v. the device has a cntrl pin to select the operating modes and sampling rate to minimize power consumption. the device operates in default micropower mode with a sampling rate of 24hz typica l and consumes only 13a typical at 1.8v. in turbo mode with a con tinuous 6.25khz sample rate, the current consumption is 1ma typical . in external- drive mode, the cntrl be can be used to change the sa mpling frequency up to 7.14khz with current consumption of 1.16ma ty pical at 1.8v. to minimize pcb space the AH8503 are available in small low profile u-dfn2020-6. features ? high accuracy linear hall effect sensor with +/-40 0g sense range and output voltage with 8-bit resolution ? supply voltage of 1.6v to 3.6v ? high accuracy: trimmed sensitivity of 2.225mv/g an d 3.8mv/g at 1.8v and 3v respectively with accuracy of 3% at +25c. ? low offset voltage ? micropower (default), turbo and external-drive mod es ? ultra low average supply current 13a typical in micropower mode (default) period a t 1.8v 1.01ma typical in turbo mode at 1.8v 1.16ma typical in external drive mode with 7.14khz sampling rate at 1.8v ? chopper stabilized design with superior temperatur e stability, minimal sensitivity drift, enhanced immunity to phy sical stress ? output voltage maintained at ?sleep? mode ? -40c to +85c operating temperature ? high esd capability of 6kv human body model ? small low profile u-dfn2020-6 package ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) pin assignments (top view) u-dfn2020-6 applications ? high accuracy level, proximity, position and trave l detection ? button press detection in digital still, video cam eras and handheld gaming consoles ? accurate door, lids and tray position detection ? liquid level detection ? joy stick control ? gaming and industrial applicat ions ? smart meters ? contact-less level, proximity and position measurement in home appliances and industrial applications notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds.
AH8503 document number: ds37684 rev. 1 - 2 2 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 typical applications circuit note: 4. c in is for power stabilization and to strengthen the n oise immunity, the recommended capacitance is 100nf typical and should be placed as close to the supply pin as possible. pin descriptions package: u-dfn2020-6 pin number pin name function 1 output output pin 2 nc no connection (note 5) 3 v dd power supply input 4 cntrl device control pin: the cntrl pin selects the modes of operation (micro power mode, turbo mode and external-drive mode) and adjusts the sampl ing rate in external drive mode to minimize the power consumption. when cntrl = gnd or floating, the device operates i n default micropower mode with 24hz sampling rate and consumes 13a typi cal at 1.8v. the cntrl pin is internally pulled low. when cntrl = v dd , the device is on and operates in turbo mode with continuous sampling rate of 6.25khz typical consumi ng 1.01ma typical at 1.8v in external drive mode, an external pwm signal can be used to drive the cntrl pin to adjust the sampling frequency form 24h z typical up to 7.14khz typical. if external pwm pulse is used, the minimum pulse width needed on the cntrl pin to start a sample/conversion is 20s typical. we recommended using a pulse width of 40s minimum. th e minimum sample and conversion cycle is140s typical. 5 gnd ground pin 6 nc no connection (note 5) pad pad the center exposed pad ? no connection internally. the exposed pad can be left open (unconnected) or t ied to the gnd on the pcb layout. note: 5. nc is ?no connection? pin and is not conne cted internally. this pin can be left open or tied to ground.
AH8503 document number: ds37684 rev. 1 - 2 3 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 functional block diagram absolute maximum ratings (note 6) (@t a = +25c, unless otherwise specified.) symbol parameter rating unit v dd and v out supply voltage and output voltage (note 7) 4 v v dd_rev and v out_rev reverse supply and output voltage -0.3 v i out output current (limited by 10kohms output resistor) v dd /10 ma b magnetic flux density withstand unlimited p d package power dissipation u-dfn2020-6 230 mw ts storage temperature range -65 to +150 c t j maximum junction temperature 150 c esd hbm human body model (hmb) esd capability 6 kv notes: 6. stresses greater than the 'absolute maxim um ratings' specified above may cause permanent dam age to the device. these are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. device reliabili ty may be affected by exposure to absolute maximum ratin g conditions for extended periods of time. 7. the absolute maximum v dd of 4v is a transient stress rating and is not mean t as a functional operating condition. it is not re commended to operate the device at the absolute maximum rat ed conditions for any period of time. re commended operating conditions (@ t a = +25c, unless otherwise specified.) symbol parameter conditions rating unit v dd supply voltage operating 1.6v to 3.6v v t a operating temperature range operating -40 to +85 c
AH8503 document number: ds37684 rev. 1 - 2 4 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 electrical characteristics (notes 8 & 9) (@t a = +25c, v dd = 1.8v, unless otherwise specified.) symbol parameter conditions min typ max unit supply current i dd_up_mode average supply current in micropower mode with continuous sampling rate of 24hz (cntrl = gnd continuously) v output = v dd /2, cntrl = gnd, v dd = 1.8v (note 10) - 13 20 a v output = v dd /2, cntrl = gnd, v dd = 3.0v (note 10) - 17 25 a i dd_turbo_mode average supply current in turbo mode with continuous sampling rate of 6.25hz (cntrl = v dd continuously) v output = v dd /2, cntrl = v dd , v dd = 1.8v (note 10) - 1.01 1.3 ma v output = v dd /2, cntrl = gnd, v dd = 3.0v (note 10) - 1.44 1.8 ma i dd_7khz_extdrv average supply current at 7.14khz sampling rate when cntrl is externally driven v output = v dd /2, cntrl clocking at 7.14khz v dd = 1.8v (note 10) - 1.16 1.5 ma v output = v dd /2, cntrl clocking at 7.14khz v dd = 3v (note 10) - 1.65 2.1 ma notes: 8. when power is initially turned on, the operating v dd (1.6v to 3.6v) must be applied to guaranteed the o utput sampling. after the supply voltage r eaches minimum operating voltage, the output state is valid after after t on_initial . 9. typical data is at t a = +25 c, v dd = 1.8v unless otherwise stated. 10. the parameters are not tested in production, they are guaranteed by design, characterization an d process control.
AH8503 document number: ds37684 rev. 1 - 2 5 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 electrical characteristics (continued) (@t a = +25c, v dd = 1.8v, unless otherwise specified.) cntrl pin timing, conversion rate and i dd supply current relationship 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 en status out icc t en t conv data0 data1 awake(on) awake(on) sleep sleep 1.35ma 1.35ma 8.9$a 8.9$a t clk AH8503 cntrl pin driven externally C external drive m ode 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 4095 4096 4097 4098 4099 4100 4101 4102 4103 4104 4105 4106 en status out icc data0 awake(on) awake(on) sleep sleep 1.35ma 1.35ma 8.9ua 8.9ua t s =4096*t clk tclk: internal clock period, typical= 10$s t s : awake cycle time = 4096*tclk 41ms AH8503 cntrl = gnd or logic low (0) continuously C mic ropower mode data1 4107 4108 4109 4110 status: awake : chip processing phase (12*t clk ) , sleep : chip retain data t clk : internal clock period, typical = 10$s t en : pulse width of enable signal, minimum=2*t clk = 20$s (typical) t conv : one sample/conversion cycle = 14*t clk = 140$s (typical) i dd ( @ v dd = 1.8v, 25 o c): (1) if cntrl pin clocked at maximum (~7.14 khz): i dd = 1.35 ma*12/14+8.93$a*2/14 1.16ma (2) if cntrl pin clocked at 24hz: i dd 13$a (3) if cntrl clocking period =t, i dd = 1.35ma*120$s/t + 8.93$a*(t-120$s)/t 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 en status out icc data0 data1 awake(on) awake(on) sleep sleep 1.35ma 1.35ma 8.9$a 8.9$a t clk t conv t clk : internal clock period, typical= 10$s t conv : one sample/conversion period when enable = hugh (v dd )= 16*t clk =160$s i dd ( @ v dd = 1.8v, 25 o c): i dd = 1.35ma*120$s/160$s + 8.93$a*40$s/160$s 1.01ma (typical) AH8503 cntrl = v dd or logic high continuously C turbo mode 29 30 31
AH8503 document number: ds37684 rev. 1 - 2 6 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 electrical characteristics (cont.) (notes 11, 12 & 13) (@t a = +25c, v dd = 1.8v, unless otherwise specified.) symbol parameter conditions min typ max unit t on_initial initial power on time v dd = 1.8v, t a = +25c, c in =0.1f, v dd rise time =10s (note 14) - 1 - ms v dd = 3v, t a = +25c, c in =0.1f, v dd rise time =10s (note 14) - 0.2 - ms t en minimum pulse width on cntrl pin to start one conversion cycle when driving cntrl pin externally (see application note section) v dd = 1.6v to 3.6v, t a = -40c to +85c (note 14) - 20 - s t conv minimum period of one sample/conversion cycle v dd = 1.6v to 3.6v, t a = -40c to +85c (note 14) 100 140 200 s f max maximum sampling frequency v dd = 1.6v to 3.6v, t a = -40c to +85c, (note 14) - 7.14 - khz f _turbo_mode sampling frequency in turbo mode with cntrl = v dd or logic high continuously cntrl = high (v dd ), v dd = 1.6v to 3.6v, t a = -40c to +85c (note 14) - 6.25 - khz f _up_mode sampling frequency in micropower mode with cntrl = gnd or logic low continuously cntrl = high (v dd ), v dd = 1.6v to 3.6v, t a = -40c to +85c (note 14) - 24 - hz t _turbo_mode awake or sampling period in turbo mode with cntrl = v dd or logic high continuously cntrl = high (v dd ), v dd = 1.6v to 3.6v, t a = -40c to +85c (note 14) - 0.16 - ms t _up_mode awake or sampling period in micropower mode with cntrl = gnd or logic low continuously cntrl = high (v dd ), v dd = 1.6v to 3.6v, t a = -40c to +85c (note 14) - 41.6 - ms v cntrl_low cntrl pin input low voltage v dd = 1.8v (note 13) 0.4 0.5 0.6 v v dd = 3.0v (note 13) 0.8 0.9 1 v v cntrl_high cntrl pin input high voltage v dd = 1.8v (note 13) 1.2 1.3 1.4 v v dd = 3v (note 13) 2.2 2.3 2.4 v output characteristics r out dc output resistance cntrl = v dd or gnd, v dd = 1.6v to 3.6v, t a = -40c to +85c, (note 14) - 10 13 k noise_rms input referred noise, rms (note 14) c in = open, v dd = 1.8v, t a = +25c, - 0.36 - g c in = open, v dd = 3.0v, t a = +25c, - 0.24 - g adc res dac res internal adc and dac resolution (note 14) - 8 - bit v out_res output voltage resolution v dd = 1.6v to 3.6v, t a = -40c to +85c - v dd /256 - mv v outh max. output voltage v dd = 1.6v to 3.6v, t a = -40c to +85c - v dd *255/256 - v v outl min. output voltage v dd = 1.6v to 3.6v, t a = -40c to +85c - 0 - v notes: 11. when power is initially turned on, the o perating v dd (1.6v to 3.6v) must be applied to guarantee the ou tput sampling. the output state is valid a fter t on_initial from the supply voltage reaching the minimum operat ing voltage. 12. typical data is at t a = +25 c, v dd = 1.8v unless otherwise stated. 13. maximum and minimum parameters values over oper ating temperature range are not tested in productio n, they are guaranteed by design, characterization and process control. 14. the parameter is not tested in production, they are guaranteed by design, characterization and pro cess control.
AH8503 document number: ds37684 rev. 1 - 2 7 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 electrical characteristics (cont.) (notes 11, 12 & 13) (@t a = +25c, v dd = 1.8v, unless otherwise specified.) symbol parameter conditions min typ max unit magnetic characteristics b range measurable magnetic flux density range v dd = 1.8v, t a = +25c 388 400 412 g v dd = 3v, t a = +25c 382 395 408 g g res gauss resolution v dd = 1.8v, t a = +25c 3.033 3.125 3.221 g/lsb v dd = 3v, t a = +25c 2.994 3.084 3.179 g/lsb v null quiescent output voltage with zero gauss b = 0.5g, t a = +25c - v dd / 2 - v v dd = 1.8v, t a = +25c 0.882 0.9 0.918 v v dd = 3v, t a = +25c 1.47 1.5 1.53 v v offset quiescent output voltage offset b = 0.5g, v dd = 1.8v, t a = +25c -1% - 1% % of v dd b = 0.5g, v dd = 3v, t a = +25c -1% - 1% % of v dd b = 0.5g, v dd = 1.6v to 3.6v, t a = -40c to +85c (note 14) -1.5 - 1.5 % of v dd v sens output voltage sensitivity v dd = 1.8v, t a = +25c 2.183 2.25 2.318 mv/g v dd = 3v, t a = +25c 3.686 3.80 3.914 v sens_acc sensitivity accuracy v dd = 1.8v, t a = +25c -3 - 3 % v dd = 3v, t a = +25c -3 - 3 % v dd = fixed at any one voltage between 1.6v to 3.6v, t a = -40c to +85c (note 14, note 15) -6 - 6 % tc_err sens sensitivity error over full temperature v dd =fixed, t a = -40c to +85c (note 14) -3 - 3 % lin+ positive linearity (span linearity) v dd = 1.8v, t a = +25c (note 14) - 99.9 - % v dd = 3.0v, t a = +25c (note 14) - 99.7 - % lin- negative linearity (span linearity) v dd = 1.8v, t a = +25c (note 14) - 100.1 - % v dd = 3.0v, t a = +25c (note 14) - 100.4 - % notes: 11. when power is initially turned on, the o perating v dd (1.6v to 3.6v) must be applied to guarantee the ou tput sampling. the output state is valid af ter t on_initial from the supply voltage reaching the minimum operat ing voltage. 12. typical data is at t a = +25 c, v dd = 1.8v unless otherwise stated. 13. maximum and minimum parameters values over oper ating temperature range are not tested in productio n, they are guaranteed by design, characterization and process control. 14. the parameter is not tested in production, they are guaranteed by design, characterization and pro cess control. 15. this term constitutes of output voltage sensiti vity temperature coefficient error and sensitivity trim accuracy.
AH8503 document number: ds37684 rev. 1 - 2 8 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 application note cntrl pin - awake and sleep period and operating mo de control cntrl pin controls the device operating mode (micro power, turbo, external drive modes) and ?awake? and ?sleep? periods during external drive mode. when the cntrl pin is pulled low or gnd continuousl y, the device operates in micropower mode with a sa mpling rate of 24hz and consumes only 13a typical at 1.8v. the cntrl pin is interna lly pulled low and therefore the default mode is mi cropower mode if the cntrl pin is left floating. when cntrl is pulled high (cntrl = v dd or pulled high) continuously, the device runs in tu rbo mode with a sampling rate of 6.25khz and consumes 1.01ma typical at 1.8v. when the cntrl pin is pulled high continuously, the conversion time t conv is 16 clock cycles (160s typical) and therefore the sampling rate is 6.25khz. if the cntrl pin is driven externally with a pwm si gnal (external drive mode), the sampling rate can b e adjusted from 24hz to 7.14khz. a minimum pulse width on cntrl pin to start a sample/ conversion is 20s typical; we recommend using a pu lse width of 40s minimum. in external drive mode with a pwm signal on the cnt rl pin, the conversion time (signal acquisition, co nversion and output update) t conv is 14 clock cycles (140s typical). when the cntrl goes h igh, the sample trigger delay is 1 clock pulse (10 s) where the supply current remains at 8.93a typical at v dd = 1.8v. after the sample trigger delay, the next 1 2 clock pulse (120s typical) is the ?awake? period , where the typical supply current is 1.35ma at 1.8v supply. the next p ulse (10s) is used to update the output stage and during this time the supply current drops back to 8.93a typical at 1.8v supply. therefore, t he average supply current of the device depends on the sampling frequency and at the maximum sampling rate of 7.14khz, it is 1.16ma typi cal at 1.8v. the maximum sampling frequency is 7.14khz when the cntrl pin is externally driven with a pwm signal. for cntrl pin clocking period of t, the average cur rent is given by dd = .. (@ 1.8v) dd = _ _ (general equation) quiescent output voltage v null and offset voltage the figure below shows the ideal transfer curve nea r zero magnetic field (b = 0gauss). zero gauss is t he transition point between v output = v dd *127/128 and v output = v dd /2. when b is slightly larger than zero, the output is one-half the supply voltage typically. quiescent output voltage (v null ) is defined as the typical output voltage when b = 0.5gauss (slightly higher than 0g). any difference of v null from v dd /2 introduces offset (v ofset ). transfer curve near 0gauss
AH8503 document number: ds37684 rev. 1 - 2 9 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 application note (continued) sensitivity and transfer characteristic the device responds to the magnetic flux density pe rpendicular to the part marking surface. for south pole magnetic flux density increase from 0g, the output voltage will increase from v null and for a north magnetic pole field, the output wi ll decrease from v null . the changes in the voltage level up or down are symmetrical to v null and are proportional to the magnetic flux density. the output voltage change is proportional to the ma gnitude and polarity of the magnetic field perpendi cular to the part marking surface. this proportionality is defined as output voltage sensit ivity and is given by: sens = outb_max ? outb_min max ? min the AH8503 has a measurable magnetic field range of +/-400g and output voltage range of 0v to (255/256 )v dd . therefore, sensitivity at 1.8v is given by: sens_1.8v = 1.8 800 = 2.25/ the device has an internal adc and dac with resolut ion of 8-bits. therefore the measurement resolution is 3.125g/lsb at v dd = 1.8v. in terms of voltage, the output resolution at 1.8v is 7mv/ls b typical. the device follows the 8-bit step for tr ansfer curve superimposed on the v sens above. this difference in theoretical linear value with 8-bit resolution steps produces a measurement (quantization) error at each step. quantization error (also measurement error) = 0.5*s tep = v dd /512(output voltage) or = full magnetic range/512 (input magnetic fiel d) transfer curve ? output voltage vs magnetic flux de nsity 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 -500 -400 -300 -200 -100 0 100 200 300 400 500 output voltage v output (v) magnetic flux density, b (gauss) t a = +25 c 3.6v 3.3v 3.0v 1.8v 1.6v
AH8503 document number: ds37684 rev. 1 - 2 10 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 application note (cont.) span linearity coordinate of transition points (v0~v255 and b0~b25 4) can be extracted from a transfer curve. span lin earity is defined and based on these coordinate points. span linearity is defined as linearity arising from sensitivity differences between the maximum flux d ensity range and half of the range for positive and negative flux density. referring to the diagra m below, north field span linearity lin- and south field span linearity lin+ are given by: ?= 0 ? 127 / 0 ? 127 64 ? 127 / 64 ? 127 += 254 ? 127 / 254 ? 127 190 ? 127 / 190 ? 127
AH8503 document number: ds37684 rev. 1 - 2 11 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 typical operating characteristics average supply current micropower mode ? 24hz sample rate micropower mode ? 24hz sample rate turbo mode ? 6.25khz sample rate turbo mode ? 6.25khz sample rate external drive mode with 7.14khz sampling rate external drive mode with 7.14khz sampling rate 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 average supply current i dd_up (a) supply voltage (v) average supply current (cntrl= gnd) vs supply volta ge micropower mode, cntrl = gnd, t a = +25 c, 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 average supply current i dd (a) temperature ( o c) average supply current (cntrl = gnd) vs temperature micropower mode, cntrl = gnd 1.6v 1.8v 2.5v 3.0v 3.3v 3.6v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 average supply current i dd (ma) supply voltage (v) average supply current (cntrl = v dd ) vs supply voltage turbo mode, cntrl = v dd , t a = +25 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 average supply current i dd (ma) temperature ( o c) average supply current (cntrl = v dd ) vs temperature turbo mode, cntrl = v dd 1.6v 1.8v 2.5v 3.0v 3.3v 3.6v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 average supply current i dd (ma) supply voltage (v) average supply current (cntrl = pwm) vs supply vol tage externally driven, cntrl = 20 s pulse 7.14khz pwm, t a = +25 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 average supply current i dd (ma) temperature ( o c) average supply current (cntrl = pwm) vs temperature externally driven, cntrl = 20 s pulse 7.14khz pwm 1.6v 1.8v 2.5v 3.0v 3.3v 3.6v
AH8503 document number: ds37684 rev. 1 - 2 12 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 typical operating characteristics (continued) typical initial power on time typical sensitivity 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 initial power on time t on_initial (ms) supply voltage (v) initial power on time vs supply voltage c in = 0.1 f, v dd rise time 10 s, t a = +25 c 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 initial power on time t on_initial (ms) temperature ( o c) initial power on time vs temperature 1.6v 1.8v 2.5v 3.0v 3.3 v 3.6 v c in = 0.1 f, v dd rise time 10 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 sensitivity (mv/gauss) supply voltage (v) sensitivity vs supply voltage t a = +25 c 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 sensitivity (mv/gauss) temperature ( o c) sensitivity vs temperature 1.6v 1.8v 2.5v 3.0v 3.3v 3.6v 2.10 2.15 2.20 2.25 2.30 2.35 2.40 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 sensitivity (mv/gauss) temperature ( o c) sensitivity vs temperature 1.8v v dd = 1.8v 3.50 3.60 3.70 3.80 3.90 4.00 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 sensitivity (mv/gauss) temperature ( o c) sensitivity vs temperature 3.0v v dd = 3.0v
AH8503 document number: ds37684 rev. 1 - 2 13 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 typical operating characteristics (cont.) typical transfer curves 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 -500 -400 -300 -200 -100 0 100 200 300 400 500 output voltage v output (v) magnetic flux density, b (gauss) output voltage vs magnetic flux density t a = +25 c 3.6v 3.3v 3.0v 1.8v 1.6v 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -500 -400 -300 -200 -100 0 100 200 300 400 500 output voltage v output (v) magnetic flux density, b (gauss) output voltage vs magntic flux density -40c 0c 25c 85c v dd = 1.6v, t a = -40 c to +85 c 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -500 -400 -300 -200 -100 0 100 200 300 400 500 output voltage v output (v) magnetic flux density, b (gauss) output voltage vs magntic flux density -40c 0c 25c 85c v dd = 1.8v, t a = -40 c to +85 c 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -500 -400 -300 -200 -100 0 100 200 300 400 500 output voltage v output (v) magnetic flux density, b (gauss) output voltage vs magntic flux density -40c 0c 25c 85c v dd = 3.0v, t a = -40 c to +85 c 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 -500 -400 -300 -200 -100 0 100 200 300 400 500 output voltage v output (v) magnetic flux density, b (gauss) output voltage vs magntic flux density -40c 0c 25c 85c v dd = 3.3v, t a = -40 c to +85 c 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 -500 -400 -300 -200 -100 0 100 200 300 400 500 output voltage v output (v) magnetic flux density, b (gauss) output voltage vs magntic flux density -40c 0c 25c 85c v dd = 3.6v, t a = -40 c to +85 c
AH8503 document number: ds37684 rev. 1 - 2 14 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 typical operating characteristics (cont.) typical null voltage: output voltage at b = 0+ gauss (note 16) note: 16. null voltage is the voltage with magnetic flux density b = 0g at the sensor. b = 0g is also the transistion point at v dd *127/128 for internal adc and dac. to avoid the transition point fluctuation dur ing measurement of null voltage, b = 0+ gauss (e.g. 0.5g which is smaller than 1lsb gauss step of 3.125g) is used. see definition of the null voltage in application section. 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 null voltage (v) supply voltage (v) null voltage vs supply voltage b = 0+ gauss, t a = +25 c 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 null voltage (v) temperature ( o c) null voltage vs temperature 1.6v 1.8v 2.5v 3.0v 3.3v 3.6v b = 0+ gauss 0.890 0.895 0.900 0.905 0.910 0.915 0.920 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 null voltage (v) temperature ( o c) null voltage vs temperature 1.8v b = 0+ gauss, v dd = 1.8v 1.45 1.46 1.47 1.48 1.49 1.50 1.51 1.52 1.53 1.54 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 null voltage (v) temperature ( o c) null voltage vs temperature 3.0v b = 0+ gauss, v dd = 3.0v
AH8503 document number: ds37684 rev. 1 - 2 15 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 typical operating characteristics (cont.) typical null voltage offset: (output voltage - v dd /2) at b = 0+ gauss (note 16) note: 16. null voltage is the voltage with magneti c flux density b = 0g at the sensor. b = 0g is also the transistion point at v dd *127/128 for internal adc and dac. to avoid the transition point fluctuation duri ng measurement of null voltage, b = 0+ gauss (e.g. 0.5g which is smaller than 1lsb gauss step of 3.125g) is used. see definition of the null voltage in application section. -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 null voltage offset (mv) supply voltage (v) null voltage offset vs supply voltage b = 0+ gauss, t a = +25 c -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 null voltage offset (mv) temperature ( o c) null voltage offset vs temperature 1.6v 1.8v 2.5v 3.0v 3.3v 3.6v b = 0+ gauss -6.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 null voltagte offset (mv) temperature ( o c) null voltage offset vs temperature 1.8v b = 0+ gauss, v dd = 1.8v -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 null voltage offset (mv) temperature ( o c) null voltage offset vs temperature 3.0v b = 0+ gauss, v dd = 3.0v
AH8503 document number: ds37684 rev. 1 - 2 16 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 ordering information part number package code packaging 7? tape and reel quantity part number suffix AH8503-fdc-7 fdc u-dfn2020-6 3,000/tape & reel -7 marking information (1) package type: u-dfn2020-6 part number package identification code AH8503-fdc-7 u-dfn2020-6 ky
AH8503 document number: ds37684 rev. 1 - 2 17 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 package outline dimensions (all dimensions in mm.) please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. (1) package type: u-dfn2020-6 bottom view sensor location (tbd) d d2 e e b l e2 a a1 a3 seating plane pin #1 id z(4x) u - dfn2020 - 6 type c dim min max typ a 0.57 0.63 0.60 a1 0.00 0.05 0.02 a3 - - 0.15 b 0.25 0.35 0.30 d 1.95 2.075 2.00 d2 1.55 1.75 1.65 e 1.95 2.075 2.0 e2 0.86 1.06 0.96 e - - 0.65 l 0.25 0.35 0.30 z - - 0.20 all dimensions in mm
AH8503 document number: ds37684 rev. 1 - 2 18 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. (1) package type: u-dfn2020-6 y2 x1 x2 y1 y x c dimensions value (in mm) c 0.650 x 0.350 x1 1.650 x2 1.700 y 0.525 y1 1.010 y2 2.400
AH8503 document number: ds37684 rev. 1 - 2 19 of 19 www.diodes.com february 2015 ? diodes incorporated AH8503 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com

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